PD - 95281A
IRF7484PbF
Typical Applications
Industrial Motor Drive
HEXFET ? Power MOSFET
V DSS R DS(on) max (m W) I D
Benefits
l Advanced Process Technology
Ultra Low On-Resistance
l
Fast Switching
l
40V
10@V GS = 7.0V
14A
A
l
l
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free
S
S
1
2
8
7
A
D
D
Description
This Stripe Planar design of HEXFET ? Power
S
3
6
D
MOSFETs utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET
are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in a wide
variety of applications.
G
4
Top View
5
D
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V
14
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
E AS
I AR
E AR
T J, T STG
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation ?
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
Junction and Storage Temperature Range
11
110
2.5
0.02
± 8.0
230
See Fig.16c, 16d, 19, 20
-55 to + 150
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R θ JL
R θ JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ?
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
1
09/22/10
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